Groupe de Physique des Matériaux - UMR CNRS 6634

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CNRS INSA de Rouen Université de Rouen

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Accueil > Recherche > Nanostructures, Nanosciences, Nanotechnologies > Matériaux de la Microélectronique et de la Photonique(ER2MP) > Publications

Publications

par LABGPM - publié le , mis à jour le

Axe 1 : Micro et Nano électronique
(Responsable S. Duguay)

  • Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation, T. Philippe, S. Duguay, D. Mathiot, D. Blavette, J. Appl. Phys. 109 (2011) 023501.
  • Atom probe tomography : from physical metallurgy towards microelectronics, D. Blavette, S. Duguay, P. Pareige, International Journal of Materials Research 102 (2011) 1074
  • Direct imaging of boron segregation to extended defects in silicon, S. Duguay, T. Philippe, F. Cristiano, D. Blavette, Appl. Phys. Lett. 97 (2010) 242104
  • Atomic-scale redistribution of dopants in polycrystalline silicon layers, S. Duguay, A. Colin, D. Mathiot, P. Morin, D. Blavette, J. Appl. Phys. 108 (2010) 034911
  • Clustering and nearest neighbour distances in atom-probe tomography, T. Philippe, F. De Geuser, S. Duguay, W. Lefebvre, O. Cojocaru-Miredin, G. Da Costa, D. Blavette, Ultramicroscopy 109 (2009) 1304
  • Atomic scale study of boron interstitial clusters in ion-implanted silicon, M. Ngamo, S. Duguay, F. Cristiano, K. Daoud-Ketata, P. Pareige, J. Appl. Phys. 105, (2009) 104904
  • Evidence of atomic-scale arsenic clustering in highly doped silicon, S. Duguay, F. Vurpillot, T. Philippe, E. Cadel, R. Larde, B. Deconihout, G. Servanton, R. Pantel, J. Appl. Phys. 106 (2009) 106102
  • Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors, E. Cadel, F. Vurpillot, R. Larde, S. Duguay, B. Deconihout, J. Appl. Phys. 106 (2009) 044908

Axe 2 : Photonique
(Responsable E. Talbot)

  • Atomic scale observation of phase separation and formation of silicon clusters in Hf high-k silicates, E. Talbot, M. Roussel, C. Genevois, P. Pareige, L. Khomenkova and F. Gourbilleau, J. Appl. Phys. 111 (2012) 103519 http://link.aip.org/link/doi/10.1063/1.4718440
  • Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering, E. Talbot, M. Roussel, L. Khomenkova, F. Gourbilleau and P. Pareige, Material Science and Engineering B 177(10) (2012) 717-720 http://dx.doi.org/10.1016/j.mseb.2011.10.011
  • Characterization and Metrology of Nanoclusters-Based Nanostructures by Atom Probe Tomography, P. Pareige, M. Roussel, R. Lardé, R. Pratibha-Nalini, F. Gourbilleau and E. Talbot, ECS Transactions 35(18) (2011) 55-63 http://dx.doi.org/10.1149/1.3647904
  • Atomic scale investigation of Si nanowires and nanoclusters, M. Roussel, W. H. Chen, E. Talbot, R. Lardé, E. Cadel, F. Gourbilleau, B. Grandidier, D. Stiévenard and P. Pareige, Nanoscale Research Letter 6 (2011) 271 http://www.nanoscalereslett.com/content/6/1/271
  • Si nanoparticles in SiO2 : an atomic scale observation for optimization of optical devices, E. Talbot, R. Lardé, F. Gourbilleau, C. Dufour and P. Pareige, Europhysics Letter 87 (2009) 26004 http://dx.doi.org/10.1209/0295-5075/87/26004

Axe 3 : Photovoltaique
(Responsable E. Cadel)